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Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation

Fri, 2008-08-15 07:01 ? Guest

N. Nepal, J. M. Zavada, D. S. Lee, and A. J. Steckl
We report on dynamics of ultraviolet (UV) emissions using above band gap excitation in Tm-doped AlN epilayers grown by solid-source molecular beam epitaxy. The UV and visible photoluminescence (PL) spectra were measured using the frequency quadrupled output from a Ti:sapphire laser. In the UV region ... [Appl. Phys. Lett. 93, 061110 (2008)] published Thu Aug 14, 2008.

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