Laserati

K. Inoue, F. Yano, A. Nishida, T. Tsunomura, T. Toyama et al.
Dopant distribution in polycrystalline Si of n-type metal-oxide-semiconductor field effect transistor was measured by laser-assisted three dimensional atom probe. Segregation of As and P atoms to grain boundaries and at the interface between gate and gate oxide, resulting from different mechanisms, ... [Appl. Phys. Lett. 93, 133507 (2008)] published Fri Oct 3, 2008.