Abstract The defects produced in 4H-SiC epitaxial layers by irradiation with 200-keV H
+ were characterized by low-temperature photoluminescence. These defects induce sharp luminescent lines, the so-called alphabet lines. Their intensity shows an evolution under UV-laser irradiation not previously observed. By monitoring the change in the resulting photoluminescence spectra versus time, we distinguish two original ‘families’ of peaks called PB
1 and PB
2. They display a different, and opposite, behaviour with laser irradiation but they are strongly correlated. In particular, the recovering rate of the PB
1 family and the growth rate of the PB
2 family are the same, indicating a structural rearrangement of defects.
- Content Type Journal Article
- Category Rapid communication
- DOI 10.1007/s00340-008-3302-1
- Authors
- M. Zimbone, Catania University Physics Department Via S.